Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulation
Ryosuke Kondo, Ayumu Yabutani, Tomoya Omori, Kazuki Yamada, Eri Matsubara, Ryota Hasegawa, Toma Nishibayashi, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Motoaki Iwaya
Abstract
In this study, AlGaN-based ultraviolet-B band laser diodes with 150-mW peak output power in pulsed operation were demonstrated at room temperature. The oscillation wavelength, differential quantum efficiency, and slope efficiency of a laser diode were 300 nm, 3.6%, and 0.15 W/A, respectively. These results were obtained by increasing the injection efficiency and decreasing the positive fixed polarization charge formed at the interface between a p-side waveguide layer and an electron blocking layer when polarization doping is formed in a p-AlGaN cladding layer.