BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application
Leming Jiao, Zuopu Zhou, Zijie Zheng, Yuye Kang, Chen Sun, Qiwen Kong, Xiaolin Wang, Dong Zhang, Gan Liu, Long Liu, Xiao Gong
Abstract
HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -based metal-ferroelectric-metal (MFM) ferroelectric tunnel junction (FTJ) with the low operating voltage (± 1.5 V) has been fabricated by simple process steps with a low thermal budget (≤ 450 °C). It enables a better read current level and a lower operating voltage compared with its metal-ferroelectric-insulator-semiconductor (MFIS) competitors, which means a reduction in the power consumption on the premise of readability. Moreover, long retention and acceptable endurance for non-volatile memory are demonstrated. With these advantages, our device shows great potential for monolithic 3D integration with the CMOS circuits in low-power storage or in-memory computing applications.