Ultralow-pressure mechanical-motion switching of ferroelectric polarization
Baoyu Wang, Xin He, Jianjun Luo, Yitong Chen, Z. Zhang, Ding Wang, Shangui Lan, Peijian Wang, Xun Han, Yuda Zhao, Zheng Li, Huan Hu, Yang Xu, Zheng‐Dong Luo, Weijin Hu, Bowen Zhu, Jian Sun, Yan Liu, Genquan Han, Xixiang Zhang, Bin Yu, Kai Chang, Fei Xue
Abstract
Ferroelectric polarization switching, achieved by mechanical forces, enables the storage of stress information in ferroelectrics and holds promise for human interface applications. The prevailing mechanical approach is locally induced flexoelectricity with large strain gradients. However, this approach usually requires huge mechanical forces, which greatly impede device applications. Here, we report an approach of using triboelectric effect to mechanically, reversibly switch ferroelectric polarization across α-In 2 Se 3 ferroelectric memristors. Through contact electrification and electrostatic induction effects, triboelectric units are used to sensitively detect mechanical forces and generate electrical voltage pulses to trigger α-In 2 Se 3 resistance switching. We realize multilevel resistance states under different mechanical forces, by which a neuromorphic stress system is demonstrated. Notably, we achieve the reversal of α-In 2 Se 3 ferroelectric polarization with a record-low mechanical force of ~10 kilopascals and even with tactile touches. Our work provides a fundamental but pragmatic strategy for creating mechanical tactile ferroelectric memory devices.