Optimization of ferroelectricity and endurance of hafnium zirconium oxide thin films by controlling element inhomogeneity
Fei Yan, Ke Cao, Yang Chen, Jiajia Liao, Min Liao, Yichun Zhou
Abstract
The discovery of ferroelectricity in thin films based on HfO<sub>2</sub> has garnered increasing attention worldwide, primarily due to their remarkable compatibility with silicon and scalability, in contrast to traditional perovskite-structured ferroelectric materials. Nonetheless, significant challenges remain in their widespread commercial utilization, particularly concerning their notable wake-up effect and limited endurance. To address these challenges, we propose a novel strategy involving the inhomogeneous distribution of Hf/Zr elements within the thin films and explore its effects on the ferroelectricity and endurance of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films. Through techniques such as grazing incidence X-ray diffraction, transmission electron microscopy, and piezoresponse force microscopy, we investigate their structural characteristics and domain switching behaviors. The experimental results indicate that the inhomogeneous distribution of Hf/Zr elements contributes to improve frequency stability and endurance, while maintaining a large remnant polarization in the Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> ferroelectric thin films. By adjusting the distribution of Zr/Hf elements within the Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films, significant enhancements in remnant polarization (2<em>P</em><sub>r</sub> > 35 μC/cm<sup>2</sup>) and endurance (>10<sup>9</sup>) along with reduced coercive voltage can be achieved. Additionally, the fabricated ferroelectric thin films also exhibit high dielectric tunability (≥ 26%) under a low operating voltage of 2.5 V whether in wake-up state or not. This study offers a promising approach to optimize both the ferroelectricity and endurance of HfO<sub>2</sub>-based thin films.