Electron Trapping Optical Storage Using A Single‐Wavelength Light Source for Both Information Write‐In and Read‐Out
Chuan Liao, Hao Wu, Huajun Wu, Liangliang Zhang, Guohui Pan, Zhendong Hao, Feng Liu, Xiaojun Wang, Jiahua Zhang
Abstract
Abstract In conventional electron trapping optical storage phosphor, both short‐ and long‐wavelength light are needed for information write‐in and read‐out, respectively, complicating the optical storage system. Here, a Y 3 Al 2 Ga 3 O 12 :Pr 3+ ,Eu 3+ optical storage phosphor with Pr 3+ as an electron donor and Eu 3+ as an electron trap is designed, and a single wavelength write‐read scheme is demonstrated, which employs the same blue laser diode (LD) light source for both optical write‐in through two‐photon up‐conversion charging and for read‐out based on photostimulated luminescence (PSL), originated from 4 f 1 5 d 1 →4 f 2 transition of Pr 3+ peaked at 315 nm in UV region. A deep electron trap with the mean depth of 1.42 eV and a narrow distribution of 0.3 eV is observed in the presence of Eu 3+ in Y 3 Al 2 Ga 3 O 12 :Pr 3+ , implying its long‐term storage potential. The write‐in and read‐out experiments are conducted using 450 nm blue LD light with the power density of 1 W cm −2 for write‐in and that with a low power density of 0.02 W cm −2 for read‐out in order to avoid the effect of up‐conversion luminescence on PSL signal. These results will advance the electron trapping optical storage scheme.