Structural, electronic and optical properties of transition metal doped Hf1-xTMxO2 (TM = Co, Ni and Zn) using modified TB-mBJ potential for optoelectronic memristors devices
Ejaz Ahmad Khera, Hafeez Ullah, Muhammad Imran, Niaz Ahmad Niaz, Fayyaz Hussain, R.M. Arif Khalil, Umbreen Rasheed, M. A. Sattar, Fasial Iqbal, Chandreswar Mahta, Anwar Manzoor Rana, Sungjun Kim
Topics & Concepts
Density functional theoryMaterials scienceResistive random-access memoryHybrid functionalDopingCondensed matter physicsOptical conductivityDopantBand gapElectronic structureOptoelectronicsDensity of statesElectronic band structureWIEN2kFermi levelLocal-density approximationPlane waveComputational chemistryElectronPhysicsChemistryOpticsElectrodePhysical chemistryQuantum mechanicsAdvanced Memory and Neural ComputingSemiconductor materials and devicesFerroelectric and Negative Capacitance Devices