High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss
Tao Sun, Kemeng Yang, Jie Wei, Yanjiang Jia, Siyu Deng, Zhijia Zhao, Bo Zhang, Xiaorong Luo
Abstract
A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction and the double-heterojunction to enhance breakdown voltage (BV). Compared with the inherent reverse conduction capability of the conventional HEMT (Con. HEMT), the built-in SBD exhibits a low reverse turn-on voltage (VRT) and its VRT is independent of the threshold voltage and gate bias. At the off-state, the fixed positive and negative polarization charges form the polarization superjunction (PSJ). Therefore, the depletion region is extended and more uniform E-field distribution is obtained. Experimental results show that the RC-PSJ-HEMT achieves a low VRT of 0.68 V, which decreases 69.1% compared with that of the Con. HEMT. The BV of the RC-PSJ-HEMT (with 7.5 μm LGD) is increased to 723 V from 202 V of the Con. HEMT.