Iodonium functionalized polystyrene as non-chemically amplified resists for electron beam and extreme ultraviolet lithography
Xindi Yao, Peng Lian, Jinping Chen, Yi Zeng, Tianjun Yu, Shuangqing Wang, Xudong Guo, Rui Hu, Peng Tian, Michaela Vockenhuber, Dimitrios Kazazis, Yasin Ekinci, Guoqiang Yang, Yi Li
Abstract
A non-chemically amplified resist (n-CAR) based on iodonium functionalized polystyrene (PSNA 0.4 ) was developed for extreme ultraviolet lithography, achieving 22 nm L/S patterns at a dose of 90.8 mJ cm −2 , underscoring its high sensitivity for n-CARs.
Topics & Concepts
ResistPolystyreneMaterials scienceLithographyExtreme ultraviolet lithographyElectron-beam lithographyUltravioletExtreme ultravioletCathode rayElectron beam processingElectronPhotochemistryNanotechnologyPolymerOptoelectronicsOpticsChemistryPhysicsComposite materialLaserNuclear physicsLayer (electronics)Advancements in Photolithography TechniquesSemiconductor materials and devicesNanofabrication and Lithography Techniques