HfO₂-Based Ferroelectric Optoelectronic Memcapacitors
Ning Liu, Jiuren Zhou, Yupeng Yao, Siying Zheng, Wenjing Feng, Mengkuo Cui, Bochang Li, Yan Liu, Yue Hao, Genquan Han
Abstract
We report one-capacitor (1C) architecture HfO2-based ferroelectric optoelectronic memcapacitors (FOMs), empowering with photoelectric perception and memory functions. Through the specially designed lightly doped semiconductor layer, the existence of photogenerated carriers can determine the non-volatile ferroelectric polarization switching under a certain positive pulse, thus realizing the capabilities of light perception and memory. Our HfO2-based FOMs demonstrate a capacitance memory window of 5.0 fF/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}^{{2}}$ </tex-math></inline-formula> and a high/low capacitance ratio of 41, which can be maintained for <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$4\times 10^{{9}}$ </tex-math></inline-formula> s and endure <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{9}}$ </tex-math></inline-formula> cycles stress. Such easy-to-implement yet hyper-integrable and CMOS compatible 1C-FOMs open up promising opportunities for next-generation edge computing and Internet of Things applications.