Direct Observation of Oxygen Ion Dynamics in a WO<sub>3‐x</sub> based Second‐Order Memristor with Dendritic Integration Functions
Ya Lin, Fanqi Meng, Tao Zeng, Qinghua Zhang, Zhongqiang Wang, Yankun Cheng, Xiaoning Zhao, Lin Gu, Haiyang Xu, Yichun Liu
Abstract
Abstract Direct observation of oxygen dynamics in an oxide‐based second‐order memristor can provide the valid evidence to clarify the memristive mechanism, however, which is still limited for now. In this study, the migration and diffusion of oxygen ions in the region of Pt/WO 3‐x Schottky interface are observed in the WO 3‐x second‐order memristor by using the technique of in situ transmission electron microscopy (TEM) and the electron energy loss spectroscopy. Interestingly, the coexistence of memristive and memcapacitive switching can be implemented in this memristor. Combined with the analysis of depth‐profile X‐ray photoelectron spectroscopy (XPS), an interface‐barrier‐modulation second‐order memristive model is proposed based on the above results. Notably, temporally correlative oxygen dynamics in the memristor offers the platform to integrate signals from multiple inputs, enabling the realization of the dendritic functions of synchronous and asynchronous integration for the application of logic operations with fault‐tolerance capability and associative learning. These findings provide the experimental evidence to in‐depth understanding of oxygen dynamics and switching mechanism in second‐order memristor, which can support the optimization of memristive performance and the achievement of biorealistic synaptic functions.