Facet-dependent electrical conductivity properties of a 4H-SiC wafer
Gautam Kumar, Jingwei Chen, Hsueh‐Heng Ma, Xing-Fu Huang, Michael H. Huang
Abstract
Electrical conductivity of a 4H-SiC wafer is facet-dependent with its {0001} face being much more conductive than its {101̄0} face, and it presents a perfect current rectification effect.
Topics & Concepts
Facet (psychology)Materials scienceRectificationWaferElectrical conductorElectrical resistivity and conductivityOptoelectronicsConductivityFace (sociological concept)Engineering physicsComposite materialElectrical engineeringVoltageSocial sciencePsychologyPhysical chemistryPersonalityBig Five personality traitsSocial psychologyChemistrySociologyEngineeringSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesGraphene research and applications