Wafer-Scale Highly Oriented Monolayer MoS<sub>2</sub> with Large Domain Sizes
Qinqin Wang, Na Li, Jian Tang, Jianqi Zhu, Qinghua Zhang, Qi Jia, Ying Lü, Zheng Wei, Hua Yu, Yanchong Zhao, Yutuo Guo, Lin Gu, Gang Sun, Wei Yang, Rong Yang, Dongxia Shi, Guangyu Zhang
Abstract
Two-dimensional molybdenum disulfide (MoS2) is an emergent semiconductor with great potential in next-generation scaled-up electronics, but the production of high-quality monolayer MoS2 wafers still remains a challenge. Here, we report an epitaxy route toward 4 in. monolayer MoS2 wafers with highly oriented and large domains on sapphire. Benefiting from a multisource design for our chemical vapor deposition setup and the optimization of the growth process, we successfully realized material uniformity across the entire 4 in. wafer and greater than 100 μm domain size on average. These monolayers exhibit the best electronic quality ever reported, as evidenced from our spectroscopic and transport characterizations. Our work moves a step closer to practical applications of monolayer MoS2.