Active-matrix monolithic gas sensor array based on MoS2 thin-film transistors
Sehwan Kim, Heekyeong Park, Sooho Choo, Seong‐Ho Baek, Yena Kwon, Na Liu, Jeong Yong Yang, Cheol‐Woong Yang, Geonwook Yoo, Sunkook Kim, Sunkook Kim, Sunkook Kim
Abstract
Abstract Highly sensitive and system integrable gas sensors play a significant role in industry and daily life, and MoS 2 has emerged as one of the most promising two-dimensional nanomaterials for gas sensor technology. In this study, we demonstrate a scalable and monolithically integrated active-matrix gas sensor array based on large-area bilayer MoS 2 films synthesized via two-successive steps: radio-frequency magnetron sputtering and thermal sulfurization. The fabricated thin-film transistors exhibit consistent electrical performance over a few centimeters area and resulting gas sensors detect NO 2 with ultra-high sensitivity across a wide detection range, from 1 to 256 ppm. This is due to the abundant grain boundaries of the sputtered MoS 2 channel, which perform as active sites for absorption of NO 2 gas molecules. The demonstrated active-matrix gas sensor arrays display good switching capabilities and are anticipated to be readily integrated with additional circuitry for different gas sensing and monitoring applications.