Interfacial Disordering and Heterojunction Enabling Fast Proton Conduction
Muhammad Yousaf, Yuzheng Lu, Enyi Hu, Muhammad Akbar, M.A.K. Yousaf Shah, Asma Noor, Majid Niaz Akhtar, Naveed Mushtaq, Senlin Yan, Xia Chen, Bin Zhu
Abstract
Abstract The interfacial disorder is a general method to change the metal‐oxygen compatibility and carrier density of heterostructure materials for ionic transport modulation. Herein, to enable high proton conduction, a semiconductor heterostructure based on spinel ZnFe 2 O 4 (ZFO) and fluorite CeO 2 is developed and investigated in terms of structural characterization, first principle calculation, and electrochemical performance. Particular attention is paid to the interfacial disordering and heterojunction effects of the material. Results show that the heterostructure induces a disordered oxygen region at the hetero‐interface of ZFO‐CeO 2 by dislocating oxygen atoms, leading to fast proton transport. As a result, the ZFO‐CeO 2 exhibits a high proton conductivity of 0.21 S cm −1 and promising fuel cell power output of 1070 mW cm −2 at 510 °C. Based upon these findings, a new mechanism is proposed by focusing on the change of O–O bond length to interpret the diffusion and acceleration of protons in ZFO‐CeO 2 on the basis of the Grotthuss mechanism. This study provides a new strategy to customize semiconductor heterostructure to enable fast proton conduction.