Noncentrosymmetric tellurite halides created by a depolymerization strategy: toward strong SHG intensity and wide bandgap
Dandan Zhou, Chun‐Li Hu, Xinwei Zhang, Jiang‐Gao Mao, Fang Kong
Abstract
)X (M = Ga, Al; X = Br, Cl) are the only examples of metal tellurites with band gap exceeding 4.0 eV and SHG intensity exceeding 4 × KDP. This work provides an effective strategy for the design and synthesis of tellurite-based NLO materials with a strong SHG effect and wide bandgap.
Topics & Concepts
DepolymerizationHalideBand gapOptoelectronicsIntensity (physics)Materials scienceChemistryPhotochemistryOpticsNanotechnologyInorganic chemistryPolymer chemistryPhysicsCrystal Structures and PropertiesSolid-state spectroscopy and crystallographyNonlinear Optical Materials Research