High-mobility carriers induced by chemical doping in the candidate nodal-line semimetal CaAgP
Yoshihiko Okamoto, Kazushige Saigusa, Taichi Wada, Youichi Yamakawa, Ai Yamakage, T. Sasagawa, Naoyuki Katayama, Hiroshi Takatsu, Hiroshi Kageyama, K. Takenaka
Abstract
We report the electronic properties of single crystals of the candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fields and a strong decrease of electrical resistivity at low temperatures probably due to weak antilocalization. Hall conductivity data indicated that the Pd-doped CaAgP has not only hole carriers induced by the Pd doping, but also high-mobility electron carriers in the proximity of the Dirac point. Electrical resistivity of Pd-doped CaAgP also showed a superconducting transition with onset temperature of $1.7\ensuremath{-}1.8\phantom{\rule{0.16em}{0ex}}\mathrm{K}$.