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Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer

Muhammad Ismail, Haider Abbas, Changhwan Choi, Sungjun Kim

2020Journal of Alloys and Compounds70 citationsDOI

Topics & Concepts

MemristorMaterials scienceReset (finance)TinOptoelectronicsVoltageResistive random-access memoryAmorphous solidBilayerSchottky diodeLayer (electronics)ElectrodeThin filmElectrical engineeringNanotechnologyDiodeChemistryMetallurgyFinancial economicsEconomicsMembraneEngineeringBiochemistryPhysical chemistryOrganic chemistryAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural Engineering
Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer | Litcius