Chemical Vapor Deposition Syntheses of Wafer‐Scale 2D Transition Metal Dichalcogenide Films toward Next‐Generation Integrated Circuits Related Applications
Jingyi Hu, Fan Zhou, Jialong Wang, Fangfang Cui, Wenzhi Quan, Yanfeng Zhang
Abstract
Abstract 2D semiconducting transition metal dichalcogenides (TMDCs), most with a formula of MX 2 (M=Mo, W; X=S, Se, etc.), have emerged as promising channel materials for next‐generation integrated circuits, considering their dangling‐bond‐free surfaces, moderate bandgaps, relatively high carrier mobilities, etc. Wafer‐scale preparation of 2D MX 2 films holds fundamental significance for realizing their applications. Chemical vapor deposition (CVD) is recognized as the most promising method for preparing electronic‐grade 2D MX 2 films. This review hereby summarizes the recent progress in CVD syntheses of wafer‐scale 2D MX 2 films and their applications in logic operations, data storage, and image capturing/processing related fields. The first part focuses on the wafer‐scale syntheses of 2D MX 2 films through designing homogeneous metal precursor supply routes (e.g., precoating soluble precursor, feeding gaseous precursor, designing independent multisource supply or face‐to‐face metal precursor supply routes). The second part highlights the epitaxial growth of monolayer MX 2 single crystals on single‐crystal Au substrates and well‐designed sapphire substrates. The third part introduces various functional device/circuit related applications of CVD‐derived 2D MX 2 wafers. Finally, challenges and prospects are discussed from the viewpoints of the controlled synthesis, reliable characterization, and damage‐free transfer of 2D MX 2 , as well as the fabrication and integration of high‐performance devices.