Exploration of 9T SRAM Cell for In Memory Computing Application
Aman Gupta, Abhishek Acharya
Abstract
Von-Neumann Architecture is the pillar of the current memory computing system & this architecture has an issue of power wall and memory wall. These walls have a big importance on computing in current time because of high eminence on data insensitive application. For this wall In-Memory Computing (IMC) is a good architecture to overcome with this issue. In this paper we are implementing In-memory computing based Boolean circuit with help of 9T SRAM and latch type sense amplifier. The Boolean operations are implemented using Generic 250 nm technology and 5 Volt VDD. We are implementing NAND, NOR, AND & OR logical Boolean gates using IMC.
Topics & Concepts
Computer scienceStatic random-access memoryIn-Memory ProcessingVon Neumann architectureLogic gateBoolean circuitMemory architectureMemory managementParallel computingSense amplifierComputer architectureEmbedded systemComputer hardwareSemiconductor memoryAlgorithmOperating systemSearch engineInformation retrievalQuery by ExampleWeb search queryAdvanced Memory and Neural ComputingSemiconductor materials and devicesFerroelectric and Negative Capacitance Devices