Design and Analysis of Response Threshold of Energy Selective Surface Based on Diode Girds
Ning Hu, Chenxi Liu, Tao Tian, Yanlin Xu, Peiguo Liu
Abstract
This article presents a detailed analysis of the response threshold of energy selective surface (ESS) based on semiconductors. ESS could adaptively protect electronic equipment from high-power microwave (HPM) when the field intensity of incident waves surpasses the response threshold, at which the semiconductors loaded on ESS are triggered on by the induced voltages or currents. The effects of various design parameters and the implied physical mechanism are investigated using electromagnetic simulations and experiments. With the help of the equivalent-circuit model (ECM), methods of modulating response threshold are proposed. According to our research, the response threshold of ESS is closely related to the quality factor <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$Q_{p}$</tex-math></inline-formula> of the corresponding ECM. ESS with a larger <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$Q_{p}$</tex-math></inline-formula> is supposed to be triggered on at a lower power level. The proposed method is used to design ESS with different response thresholds through adjustment of geometry parameters instead of replacing semiconductors. Prototypes are fabricated and measured under different power levels. The results agree well with simulations, proving the proposed method is effective and useful in the design of ESS.