Advanced atomic layer deposition: metal oxide thin film growth using the discrete feeding method
Jae Chan Park, Chang Ik Choi, Sang‐Gil Lee, Seung Jo Yoo, Ji‐Hyun Lee, Jae Hyuck Jang, Woo‐Hee Kim, Ji‐Hoon Ahn, Jeong Hwan Kim, Tae Joo Park
Abstract
A HfO 2 film was grown using discrete feeding ALD, an advanced ALD process designed to improve the surface coverage of the precursor, which decreased the residual impurities in the film and increased the film density.
Topics & Concepts
Atomic layer depositionMaterials scienceDeposition (geology)Layer (electronics)OxideMetalImpurityChemical engineeringThin filmMetallurgyNanotechnologyOrganic chemistryChemistrySedimentBiologyEngineeringPaleontologySemiconductor materials and devicesElectronic and Structural Properties of OxidesFerroelectric and Negative Capacitance Devices