Contact engineering for 2D Janus MoSSe/metal junctions
Yu Shu, Ting Li, Naihua Miao, Jian Gou, Xiao‐Chun Huang, Zhou Cui, Rui Xiong, Cuilian Wen, Jian Zhou, Baisheng Sa, Zhimei Sun
Abstract
) was developed, which enables the prediction of the Schottky barrier height for different MoSSe-based MSJ. These results provide valuable theoretical guidance for realizing ideal Ohmic contacts in electronic devices based on the Janus MoSSe semiconductors.
Topics & Concepts
JanusMaterials scienceEngineeringNanotechnology2D Materials and ApplicationsMXene and MAX Phase MaterialsAdvanced Photocatalysis Techniques