Silicon solar cells with passivating contacts: Classification and performance
Di Yan, Andrés Cuevas, Josua Stückelberger, Er‐Chien Wang, Sieu Pheng Phang, Teng Kho, J. Michel, Daniel Macdonald, James Bullock
Abstract
Abstract The year 2014 marks the point when silicon solar cells surpassed the 25% efficiency mark. Since then, all devices exceeding this mark, both small and large area, with contacts on both sides of the silicon wafer or just at the back, have utilized at least one passivating contact. Here, a passivating contact is defined as a group of layers that simultaneously provide selective conduction of charge carriers and effective passivation of the silicon surface. The widespread success of passivating contacts has prompted increased research into ways in which carrier‐selective junctions can be formed, yielding a diverse range of approaches. This paper seeks to classify passivating contact solar cells into three families, according to the material used for charge‐carrier selection: doped amorphous silicon, doped polycrystalline silicon, and metal compounds/organic materials. The paper tabulates their current efficiency values, discusses distinctive features, advantages, and limitations, and highlights promising opportunities going forth towards even higher conversion efficiencies.