Amorphous p-Type CuNiSnO Thin-Film Transistors Processed at Low Temperatures
Xiaohan Cheng, Bojing Lu, Jianguo Lü, Siqin Li, Rongkai Lu, Shilu Yue, Lingxiang Chen, Zhizhen Ye
Abstract
In this article, we have developed an amorphous CuNiSnO (a-CNTO), which is a p-type amorphous oxide semiconductor (AOS). The a-CNTO thin films were deposited by the pulsed laser deposition method, having high amorphous quality with a rather smooth surface. The a-CNTO films grown at 100°C exhibited the smoothest surface (root-mean-square roughness of 0.25 nm), highest visible transparency (~85%), and most favorable p-type conductivity (hole concentration of ~10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> ), which are very suitable for electronic device fabrication. Thus, the obtained p-type a-CNTO thin-film transistors (TFTs) have an ON-to-OFF current ratio of ~1.2 x 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> , the threshold voltage of -2.3 V, the field-effect mobility of 1.37 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs, and subthreshold swing of 0.70 V/decade. As a new kind of p-type AOS, the achievement of the p-type a-CNTO TFTs and the low-temperature processes may open the door for practical applications in transparent and flexible electronics.