Demonstration of a collective hybrid die-to-wafer integration using glass carrier
Samuel Suhard, Koen Kennes, Pieter Bex, Anne Jourdain, Lieve Teugels, Edward Walsby, Chris Bolton, Jash Patel, Huma Ashraf, Richard Barnett, Ferenc Fodor, Alain Phommahaxay, D. La Tulipe, Gerald Beyer, Eric Beyne
Abstract
In this paper, a collective hybrid bonding of a die to wafer integration using glass wafer is demonstrated. The key process steps such as thinning on glass, carrier preparation, CMP die population and wafer to wafer bonding are discussed. Die to wafer bonding yield of 90% is shown. Promising electrical yields of more than 80% are obtained on daisy chains (219 pads connections) on pitches ranging from 7μm to 40 μm.
Topics & Concepts
WaferDie (integrated circuit)Wafer bondingMaterials scienceDie preparationYield (engineering)Anodic bondingWafer-scale integrationWafer testingOptoelectronicsComposite materialNanotechnologyWafer dicing3D IC and TSV technologiesElectronic Packaging and Soldering TechnologiesSemiconductor Lasers and Optical Devices