Study on the effects of growth rate on GaN films properties grown by plasma-assisted molecular beam epitaxy
HePeng Zhang, JunShuai Xue, YongRui Fu, Mei Yang, YaChao Zhang, Xiaoling Duan, WeiTing Qiang, LanXing Li, ZhiPeng Sun, Xiaohua Ma, Jincheng Zhang, Yue Hao
Topics & Concepts
Molecular beam epitaxySapphireEpitaxyPhotoluminescenceHillockMaterials scienceOptoelectronicsGrowth rateAnalytical Chemistry (journal)ChemistryNanotechnologyOpticsLayer (electronics)LaserComposite materialMathematicsGeometryChromatographyPhysicsGaN-based semiconductor devices and materialsZnO doping and propertiesGa2O3 and related materials