Dual-Band Class-F Power Amplifier With Bandwidth Expansion Based on Sector Microstrip Branch for 5G Applications
Hongyi Zhao, Dan Zhang
Abstract
This letter presents a dual-band class-F power amplifier (PA) design with an extended bandwidth for 5G communication applications. A bandwidth expansion structure is established based on the sector microstrip, then combined with a dual-frequency harmonic control network to reach dual-frequency bandwidth of 2*200 MHz while maintaining high efficiency. The saturated output power of the proposed device is between 41.5 and 41.8 dBm, the gain is from 11.6 to 11.9 dB, the drain efficiency (DE) is 71% to 75%, and the power added efficiency (PAE) is 65% to 70% at 3.3-3.5 GHz. The saturated power and the DE at 4.8-5.0 GHz are over 39.5 dBm and 61%, respectively. The gain ranges from 9.7 to 10.1 dB and the minimum PAE is 58%.
Topics & Concepts
Power bandwidthAmplifierBandwidth (computing)dBmMulti-band deviceMicrostripElectrical engineeringPower-added efficiencyRF power amplifierElectronic engineeringEngineeringOptoelectronicsPhysicsTelecommunicationsAntenna (radio)Advanced Power Amplifier DesignRadio Frequency Integrated Circuit DesignPAPR reduction in OFDM