Ferroelectric 2D SnS<sub>2</sub> Analog Synaptic FET
Chong‐Myeong Song, Dongha Kim, Shinbuhm Lee, Hyuk‐Jun Kwon
Abstract
Abstract In this study, the development and characterization of 2D ferroelectric field‐effect transistor (2D FeFET) devices are presented, utilizing nanoscale ferroelectric HfZrO 2 (HZO) and 2D semiconductors. The fabricated device demonstrated multi‐level data storage capabilities. It successfully emulated essential biological characteristics, including excitatory/inhibitory postsynaptic currents (EPSC/IPSC), Pair‐Pulse Facilitation (PPF), and Spike‐Timing Dependent Plasticity (STDP). Extensive endurance tests ensured robust stability (10 7 switching cycles, 10 5 s (extrapolated to 10 years)), excellent linearity, and high G max / G min ratio (>10 5 ), all of which are essential for realizing multi‐level data states (>7‐bit operation). Beyond mimicking synaptic functionalities, the device achieved a pattern recognition accuracy of ≈94% on the Modified National Institute of Standards and Technology (MNIST) handwritten dataset when incorporated into a neural network, demonstrating its potential as an effective component in neuromorphic systems. The successful implementation of the 2D FeFET device paves the way for the development of high‐efficiency, ultralow‐power neuromorphic hardware which is in sub‐femtojoule (48 aJ/spike) and fast response (1 µs), which is 10 4 folds faster than human synapse (≈10 ms). The results of the research underline the potential of nanoscale ferroelectric and 2D materials in building the next generation of artificial intelligence technologies.