Robust pure spin current induced by the photogalvanic effect in half-silicane with spatial inversion symmetry
Zhentao Fu, Pinglan Yan, Jin Li, Sifan Zhang, Chaoyu He, Tao Ouyang, Chunxiao Zhang, Chao Tang, Jianxin Zhong
Abstract
the PG effect is several orders of magnitude larger than that obtained in metal/semiconductor/metal systems. These findings suggest a promising approach for generating pure spin current by the PG effect and provide a new possibility for the application of 2D half-silicane in spintronics.
Topics & Concepts
Inversion (geology)Point reflectionRealization (probability)Symmetry (geometry)Current (fluid)Materials scienceSpin (aerodynamics)Condensed matter physicsPhysicsMathematicsGeometryGeologyStructural basinThermodynamicsStatisticsPaleontologyGraphene research and applicationsQuantum and electron transport phenomenaTopological Materials and Phenomena