A facile solution processible self-rectifying and sub-1 V operating memristor <i>via</i> oxygen vacancy gradient within a TiO<sub>2</sub> single layer
Min Ho Park, Jun Hyung Jeong, Wonsik Kim, Soo Hyung Park, Byeong Min Lim, Hong‐Sub Lee, Seong Jun Kang
Abstract
A sub-1 V operating memristor via oxygen vacancy gradient within a TiO 2 single layer.
Topics & Concepts
MemristorMaterials scienceVacancy defectLayer (electronics)OxygenChemical engineeringChemical physicsNanotechnologyCondensed matter physicsPhysicsOrganic chemistryChemistryQuantum mechanicsEngineeringAdvanced Memory and Neural ComputingNeuroscience and Neural EngineeringPhotoreceptor and optogenetics research