Multifunctional black phosphorus/MoS <sub>2</sub> van der Waals heterojunction
Xixi Jiang, Min Zhang, Liwei Liu, Xinyao Shi, Yafen Yang, Kai Zhang, Hao Zhu, Lin Chen, Xinke Liu, Qingqing Sun, David Wei Zhang
Abstract
Abstract The fast‐developing information technology has imposed an urgent need for effective solutions to overcome the limitations of integration density in chips with smaller size but higher performance. van der Waals heterojunctions built with two‐dimensional (2D) semiconductors have been widely studied due to their 2D nature, and their unique electrical and photoelectronic properties are quite attractive in realizing multifunctional devices toward multitask applications. In this work, black phosphorus (BP)/MoS 2 heterojunctions have been used to build electronic devices with various functionalities. A p‐n diode is achieved based on the vertically stacked BP/MoS 2 heterojunction exhibiting an ideal factor of 1.59, whereas a laterally stacked BP/MoS 2 heterojunction is implemented to fabricate a photodetector that shows a photodetection responsivity of 2000 mA/W at a wavelength of 1300 nm. Furthermore, a ternary inverter has been realized using a BP field‐effect transistor in‐series with a lateral BP/MoS 2 heterojunction. Such results have unambiguously demonstrated the superiority of BP/MoS 2 heterojunction in realizing multiple functionalities and have offered a new pathway for the design and engineering of future circuitry and device integration based on novel 2D semiconductors.