A landscape of β-Ga<sub>2</sub>O<sub>3</sub> Schottky power diodes
Man Hoi Wong
Abstract
Abstract β -Ga 2 O 3 Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β -Ga 2 O 3 rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect. Characteristic device properties including on-resistance, breakdown voltage, rectification ratio, dynamic switching, and nonideal effects are summarized for the different devices. Notable results on the high-temperature resilience of β -Ga 2 O 3 Schottky diodes, together with the enabling thermal packaging solutions, are also presented.
Topics & Concepts
Schottky diodeRectificationOptoelectronicsDiodeReverse leakage currentMaterials scienceSchottky barrierEngineering physicsBreakdown voltageRectifier (neural networks)Leakage (economics)VoltageElectrical engineeringComputer scienceEngineeringEconomicsArtificial neural networkStochastic neural networkMacroeconomicsRecurrent neural networkMachine learningGa2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis Techniques