A nanopillar-modified high-sensitivity asymmetric graphene–GaN photodetector
Chang Liu, Xiaodong Li, Tiangui Hu, Wenkai Zhu, Faguang Yan, Tiesheng Wu, Kaiyou Wang, Lixia Zhao
Abstract
Jones, a small dark current of 5.2 nA at +3 V bias, and a nearly three order of magnitude rectification ratio enhancement compared with non-nanopillar PDs. This pioneering work provides a novel nanostructure-modifying method for combining 2D materials and 3D semiconductors to improve the performances of electronic and optoelectronic devices.
Topics & Concepts
NanopillarMaterials sciencePhotocurrentPhotodetectorOptoelectronicsSemiconductorGrapheneEtching (microfabrication)Dark currentElectrodeNanotechnologyNanostructureLayer (electronics)Physical chemistryChemistryGaN-based semiconductor devices and materialsGa2O3 and related materials2D Materials and Applications