A Status Overview of SiC MOSFET Reliability
P. Moens, S. Maslougkas, Marina Avramenko, G. Gomez-Garcia, S. Kuzmanoska, Martin Domeij
Abstract
This paper provides a status overview of SiC transistor reliability, with focus on a commercially released planar gate technology with a thermally grown gate oxide. Gate dielectric lifetime from time dependent dielectric breakdown (TDDB), lifetime under reverse drain bias, susceptibility to single event burn-out under neutron irradiation, bias temperature instability (BTI), gate switching instability (GSI), and bipolar degradation are discussed. Experimental data, modeling and lifetime projections are provided with a focus on automotive traction applications.
Topics & Concepts
MOSFETReliability engineeringReliability (semiconductor)Computer scienceElectrical engineeringEngineeringTransistorPhysicsVoltageQuantum mechanicsPower (physics)Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesAluminum Alloys Composites Properties