Structure–Property Relation in Organic–Metal Oxide Hybrid Phototransistors
Zetian Chen, Gil Sheleg, Himanshu Shekhar, Nir Tessler
Abstract
, and a linear response. The mechanism of the photoinduced memory is studied experimentally and verified using a device simulation. We find that the memory is due to long charge retention time at the organic PHJ interface which is stable for over 9 days. It is correlated with the low leakage current found in ordered organic junctions having low subgap tail states. The presented integration of the PHJ with the transistor constitutes a new design of write-once-read-many-times memory device that is likely to be attractive for low-cost applications.
Topics & Concepts
Materials scienceResponsivityHeterojunctionOptoelectronicsPhotodetectorTransistorOxidePlanarIndiumVoltageComputer scienceElectrical engineeringMetallurgyComputer graphics (images)EngineeringThin-Film Transistor TechnologiesOrganic Electronics and PhotovoltaicsAdvanced Memory and Neural Computing