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Hetro-Dielectric (HD) Oxide-Engineered Junctionless Double Gate all around (DGAA) Nanotube Field Effect Transistor (FET)

Raj Kumar, Arvind Kumar

2020Silicon17 citationsDOI

Topics & Concepts

Materials scienceDielectricDrain-induced barrier loweringOptoelectronicsSubthreshold slopeGate oxideField-effect transistorGate dielectricTransistorQuantum tunnellingOxideHigh-κ dielectricLeakage (economics)NanotechnologyElectrical engineeringVoltageMacroeconomicsEconomicsMetallurgyEngineeringSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignNanowire Synthesis and Applications
Hetro-Dielectric (HD) Oxide-Engineered Junctionless Double Gate all around (DGAA) Nanotube Field Effect Transistor (FET) | Litcius