Performance Enhancement of Lead-Free CsSnI<sub>3</sub> Perovskite Solar Cell: Design and Simulation With Different Electron Transport Layers
Md. Ferdous Wahid, Md. Shahriar Rahman, Nowshad Ahmed, Abdullah Al Mamun, Md. Nuralam Howlader, Tarpan Paul, Md. Motiur Rahman Tareq, Md. Sazedur Rahman, Md Mizanur Rahman
Abstract
CsSnI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> is a promising lead-free material that shows potential as a substitute for lead-based material in the development of ecologically benign perovskite solar cells (PSCs) due to its low cost, high efficiency, and excellent thermal stability. This research is intended to enhance the efficiency of CsSnI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -based PSCs by employing numerical simulation through the One Dimensional Solar Cell Capacitance Simulator (SCAPS-1D) to optimize the optoelectronic properties of the electron transport layer (ETL), absorber layer, hole transport layer (HTL), and different interface layers. An investigation was conducted to evaluate the influence of different ETLs namely WS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> , ZnSe, C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">60</sub> and PCBM on the performance of CsSnI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -based PSCs utilizing poly (3-hexylthiophene-2,5-diyl) (P3HT) as the HTL. Moreover, the influence of variations in the thickness, doping density, and defect density of the absorber layer, ETL, and HTL on key photovoltaic parameters including power conversion efficiency (PCE), short-circuit current density (J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>SC</i></sub> ), open circuit voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>OC</i></sub> ), and fill factor (FF) was observed. The findings revealed that depending on the ETL employed, the PCE varies between the structures. For structures using WS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> , ZnSe, C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">60</sub> , and PCBM as ETL, the corresponding PCE values are 31.63%, 29.64%, 29.75%, and 29.62%. Additionally, for all PSC structures, the effects of interface defect, temperature, series-shunt resistance, capacitance-voltage characteristics, and Mott-Schottky plot have been observed, and the corresponding current density-voltage (J-V), quantum efficiency (QE), generation, and recombination rates have been computed. Finally, the outcomes of this analysis were compared with prior research conducted on CsSnI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -based PSCs, thereby offering significant perspectives for their advancement and commercial viability.