Innovative NiAl Electrodes for Long-Term, Intermediate High-Temperature SAW Sensing Applications Using LiNbO<sub>3</sub> Substrates
Jordan Maufay, Baptiste Paulmier, Mélanie Emo, Ulrich Youbi, Esther Mbina, Thierry Aubert, Ninel Kokanyan, Sami Hage‐Ali, M. Vilasi, Omar Elmazria
Abstract
Wireless surface acoustic wave (SAW) reflective delay line (R-DL) technology is very powerful to carry out remote measurements of various parameters under harsh environments, while enabling the identification of a given sensor among several of them. However, R-DL technology is currently limited to 350 °C for long-term applications, likely because of aluminum electrodes oxidation and/or congruent lithium niobate (LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) segregation process. In this study, an innovative alloy, namely, NiAl, is investigated as an alternative to Al to make R-DLs able to withstand high temperatures up to 500 °C on the long term. Indeed, NiAl gathers, in the bulk state, all the necessary properties (fairly low electrical resistivity and density, high melting temperature, and resistance to oxidation). The study also examines the extent of the congruent LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> segregation process to determine its impact on the NiAl/LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> R-DLs performances. The obtained results are very promising. NiAl electrodes self-passivate during the first 50 h of annealing at 500 °C: 20-nm-thick Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> layers form at the surface and in between the electrodes and the substrate, protecting the remaining NiAl layer from further oxidation. Besides, the segregation process occurs mainly in the same time. It is located in the first 150–200 nm of the substrate. Both phenomena have no significant impact on the performance of NiAl/LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> R-DLs working at 433 MHz. Continuous in situ electrical monitoring of such devices shows a standard deviation of the operating frequency of only 1.04 ppm during an annealing process of 250 h at 500 °C. Moreover, the time-resolved <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${S}_{{11}}$ </tex-math></inline-formula> response of the device at the end of this treatment is not degraded at all. Thus, 433-MHz NiAl/LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> R-DL sensors can operate with high fidelity for at least 10 days at 500 °C under air atmosphere, and there are strong signs that their lifetime is actually much longer.