Electrical performance of La-doped In<sub>2</sub>O<sub>3</sub> thin-film transistors prepared using a solution method for low-voltage driving
Hongguo Du, Kamale Tuokedaerhan, Renjia Zhang
Abstract
at a low operating voltage of 1 V. Therefore, regulating the doping concentration of La can greatly enhance the performance of TFT devices, which promotes the application of such devices in high-performance, large-scale, and low-power electronic systems.
Topics & Concepts
Thin-film transistorMaterials scienceDopingTransistorVoltageChartAnalytical Chemistry (journal)Transfer (computing)OptoelectronicsElectrical engineeringChemistryComputer scienceNanotechnologyMathematicsEngineeringStatisticsChromatographyLayer (electronics)Parallel computingThin-Film Transistor TechnologiesZnO doping and propertiesTransition Metal Oxide Nanomaterials