Litcius/Paper detail

ChameleonDB

Wenhui Zhang, Xingsheng Zhao, Song Jiang, Hong Jiang

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Abstract

The emergence of Intel's Optane DC persistent memory (Optane Pmem) draws much interest in building persistent key-value (KV) stores to take advantage of its high throughput and low latency. A major challenge in the efforts stems from the fact that Optane Pmem is essentially a hybrid storage device with two distinct properties. On one hand, it is a high-speed byte-addressable device similar to DRAM. On the other hand, the write to the Optane media is conducted at the unit of 256 bytes, much like a block storage device. Existing KV store designs for persistent memory do not take into account of the latter property, leading to high write amplification and constraining both write and read throughput. In the meantime, a direct re-use of a KV store design intended for block devices, such as LSM-based ones, would cause much higher read latency due to the former property.

Topics & Concepts

Computer scienceByteDramBlock (permutation group theory)ThroughputLatency (audio)Computer hardwareOperating systemEmbedded systemWirelessTelecommunicationsMathematicsGeometryAdvanced Data Storage TechnologiesParallel Computing and Optimization TechniquesDistributed systems and fault tolerance