Comparison Investigations on Unclamped-Inductive-Switching Behaviors of Power GaN Switching Devices
Sheng Li, Siyang Liu, Chi Zhang, Le Qian, Shuxuan Xin, Chen Ge, Weifeng Sun
Abstract
This article makes the comparisons on the behaviors of three types of commercial GaN power switching devices, including Schottky gate p-GaN high electron mobility transistor (HEMT), ohmic gate p-GaN HEMT with hybrid drain, and Cascode GaN device, under single-pulse and repetitive unclamp-inductive-switching (UIS) conditions by experiments and simulations. It shows that all the three types of GaN devices withstand the UIS stress by storing energy in parasitic capacitances rather than by avalanche process, which is a different phenomenon compared with traditional Si/SiC devices. However, the failure phenomena under single-pulse UIS condition are different. For the two types of p-GaN gate devices, the inverse-piezoelectric induced punch-through makes the burnout under drain contact region. For the Cascode device, the breakdown of the inner Si device dominates the failure. As for the behaviors under repetitive UIS stresses, p-GaN gate device with hybrid drain performs the best, Schottky gate p-GaN HEMT shows the most serious electrical performance degradations due to the trapping effects and carrier storage phenomena, Cascode GaN device exhibits stable threshold voltage and acceptable degradations of <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> -state resistance due to the existence of inner Si device.