UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes
Shanshan Chen, Tengrun Zhan, Xinhua Pan, Haiping He, Jingyun Huang, Bin Lu, Zhizhen Ye
Abstract
O multiple quantum wells (MQWs) were employed as active layers to fabricate the p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It exhibited an efficient UV emission around 370 nm at room temperature. Calculated band structures and carrier distributions showed that electrons were restricted to overflow to the p-type layer, and carriers were confined in the high-quality MQWs well layer.
Topics & Concepts
ElectroluminescenceOptoelectronicsMaterials scienceLayer (electronics)Active layerMolecular beam epitaxyDiodeLight-emitting diodeQuantum wellQuality (philosophy)ElectronEpitaxyNanotechnologyOpticsLaserPhysicsQuantum mechanicsThin-film transistorZnO doping and propertiesGaN-based semiconductor devices and materialsGa2O3 and related materials