High-Performance <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-Based Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor Under Zero Gate Bias
Zhe Li, Zhaoqing Feng, Yu‐Wen Huang, Yu Xu, Zeyulin Zhang, Qian Feng, Weidong Zhu, Dazheng Chen, Hong Zhou, Jincheng Zhang, Chunfu Zhang, Yue Hao
Abstract
In this work, a high-performance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -based solar-blind metal–oxide–semiconductor field-effect phototransistor (SBPT) is demonstrated. SBPT exhibits excellent photoelectrical properties when the gate voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {GS}}$ </tex-math></inline-formula> ) bias is at 0 V, including a large photo-dark current ratio ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">PDCR</i> ) of 1.5 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times \,\,10^{{6}}$ </tex-math></inline-formula> , a high responsivity ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}$ </tex-math></inline-formula> ) of 1.3 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times \,\,10^{{7}}$ </tex-math></inline-formula> A/W, a large external quantum efficiency (EQE) of 6.4 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times \,\,10^{{7}}$ </tex-math></inline-formula> % and a high detectivity ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${D}^{\ast }$ </tex-math></inline-formula> ) of 4.8 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times \,\,10^{{18}}$ </tex-math></inline-formula> Jones. Decay time ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\tau _{d}$ </tex-math></inline-formula> ) is extracted to be 454 ms. The ultrahigh photoresponse performance of the device illustrates that SBPT working at the gate bias of 0 V provides a potential route for the application of solar-blind photodetector (SBPD).