Quantum Dot Lasers Directly Grown on 300 mm Si Wafers: Planar and In-Pocket
Kaiyin Feng, Chen Shang, Eamonn T. Hughes, Andrew Clark, Rosalyn Koscica, Peter Ludewig, D.L. Harame, John E. Bowers
Abstract
We report for the first time the direct growth of quantum dot (QD) lasers with electrical pumping on 300 mm Si wafers on both a planar template and in-pocket template for in-plane photonic integration. O-band lasers with five QD layers were grown with molecular beam epitaxy (MBE) in a 300 mm reactor and then fabricated into standard Fabry–Perot ridge waveguide cavities. Edge-emitting lasers are demonstrated with high yield and reliable results ready for commercialization and scaled production, and efforts to make monolithically integrated lasing cavities grown on silicon-on-insulator (SOI) wafers vertically aligned and coupled to SiN waveguides on the same chip show the potential for 300 mm-scale Si photonic integration with in-pocket direct MBE growth.