Homogeneous in-plane WSe<sub>2</sub> P–N junctions for advanced optoelectronic devices
Dewu Yue, Xin Ju, Tao Hu, Ximing Rong, Xinke Liu, Xiao Liu, Hong Kuan Ng, Dongzhi Chi, Xinzhong Wang, Jing Wu
Abstract
p-n homojunction was analyzed. Our proposed strategy offers a powerful route to realize low contact resistance and high photoresponsivity in 2D TMDC-based optoelectronic devices, paving the way for next-generation atomic-thickness optoelectronics.
Topics & Concepts
HomojunctionAmbipolar diffusionMaterials scienceOptoelectronicsDopingContact resistanceSchottky barrierOhmic contactHeterojunctionWaferNanotechnologyPlasmaDiodePhysicsQuantum mechanicsLayer (electronics)2D Materials and ApplicationsGraphene research and applicationsMXene and MAX Phase Materials