GaP/Si(0 0 1) interface study by XPS in combination with Ar gas cluster ion beam sputtering
Oleksandr Romanyuk, Ivan Gordeev, Agnieszka Paszuk, Oliver Supplie, Jan Philipp Stoeckmann, J. Houdková, Egor Ukraintsev, I. Bartoš, P. Jiřı́ček, Thomas Hannappel
Topics & Concepts
X-ray photoelectron spectroscopySputteringHeterojunctionMaterials scienceAnalytical Chemistry (journal)Ion beamThin filmBand gapBinding energyPhotoelectric effectAtomic physicsIonChemistryOptoelectronicsNuclear magnetic resonanceNanotechnologyOrganic chemistryPhysicsChromatographyElectron and X-Ray Spectroscopy TechniquesIon-surface interactions and analysisSemiconductor materials and devices