The growth mechanism and intriguing optical and electronic properties of few-layered HfS<sub>2</sub>
Jitendra Kumar Singh, Jiahui Shao, Guanting Chen, Hansong Wu, Meng‐Lin Tsai
Abstract
Due to electronic properties superior to group VIB (Mo and W) transition metal dichalcogenides (TMDs), group IVB (Hf and Zr) TMDs have become intriguing materials in next-generation nanoelectronics.
Topics & Concepts
Raman spectroscopyMaterials scienceBand gapSubstrate (aquarium)Transition metalChemical vapor depositionNanoelectronicsSapphireOptoelectronicsCrystallographyNanotechnologyChemistryOpticsLaserCatalysisOceanographyGeologyPhysicsBiochemistry2D Materials and ApplicationsMXene and MAX Phase MaterialsFerroelectric and Negative Capacitance Devices