A B<sub>2</sub>N monolayer: a direct band gap semiconductor with high and highly anisotropic carrier mobility
Shuyi Lin, Yu Guo, Meiling Xu, Jijun Zhao, Yiwei Liang, Xuanhao Yuan, Yiming Zhang, Feilong Wang, Jian Hao, Yinwei Li
Abstract
A planar 2D B 2 N monolayer with a desirable direct band gap, high thermal stability, and high and highly anisotropic carrier mobility is shown to be a promising functional material for nanoelectronics and optoelectronics applications.
Topics & Concepts
MonolayerSemiconductorBand gapMaterials scienceDirect and indirect band gapsAnisotropyLattice (music)StoichiometryElectron mobilityPlanarCondensed matter physicsElectronic band structureCrystallographyOptoelectronicsNanotechnologyChemistryOpticsPhysicsOrganic chemistryComputer scienceAcousticsComputer graphics (images)2D Materials and ApplicationsMXene and MAX Phase MaterialsBoron and Carbon Nanomaterials Research