Metalorganic vapor phase epitaxy of GaN on 2 inch ScAlMgO <sub>4</sub> (0001) substrates
Takato Fukui, Taro Sakaguchi, Yoshinobu Matsuda, Makoto Matsukura, Takahiro Kojima, Mitsuru Funato, Yoichi Kawakami
Abstract
Abstract GaN layers are grown on 2 inch ScAlMgO 4 (0001) nominally on-axis substrates by metalorganic vapor phase epitaxy. The epilayer structural qualities are comparable to those of conventional GaN on sapphire (0001) substrates. The wafer curvature is investigated using X-ray diffraction, and the results suggest suppressed bowing in the GaN/ScAlMgO 4 heterostructures compared with the GaN/sapphire heterostructures. This result is attributed to a smaller mismatch of the thermal expansion coefficients in GaN/ScAlMgO 4 . The suppressed bowing can be beneficial for device processes.
Topics & Concepts
EpitaxySapphireHeterojunctionMaterials scienceWaferOptoelectronicsBowingMetalorganic vapour phase epitaxyVapor phaseDiffractionChemical vapor depositionCurvatureOpticsNanotechnologyLaserLayer (electronics)PhysicsGeometryTheologyThermodynamicsMathematicsPhilosophyGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties