200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs

Thibault Cosnier, Olga Syshchyk, Brice De Jaeger, Karen Geens, Deepthi Cingu, Elena Fabris, Matteo Borga, Anurag Vohra, Ming Zhao, Benoit Bakeroot, D. Wellekens, Alessandro Magnani, Pavan Vudumula, Urmimala Chatterjee, R. Langer, Stefaan Decoutere

20212021 IEEE International Electron Devices Meeting (IEDM)24 citationsDOI

Abstract

This paper demonstrates a 200 V GaN-on-SOI smart power integrated circuits (ICs) platform developped on 200 mm substrates. Depletion-mode (d-mode) MIS-HEMTs and Gated-Edge-Termination Schottky barrier diodes (GET-SBDs) have been successfully integrated in an enhancement-mode (e-mode) HEMT technology baseline. A variety of low-voltage analog/logic devices and passive components further supports the GaN ICs platform. These results significantly contribute to monolithic GaN integration for power ICs and create key opportunities for the development of GaN power circuits and complex converter topologies.

Topics & Concepts

Materials scienceSchottky diodeOptoelectronicsHigh-electron-mobility transistorSilicon on insulatorIntegrated circuitDiodeElectrical engineeringGallium nitridePower (physics)Electronic circuitElectronic engineeringVoltageEngineeringTransistorSiliconNanotechnologyPhysicsQuantum mechanicsLayer (electronics)GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devices